(13.0) 8:00 - 8:10AM- Welcome (13.1) 8:10 - 8:30 AM - Effect of Growth Temperature on Lattice Relaxation during SiGe Growth on Si Substrates

(13.0) 8:00 - 8:10AM- Welcome (13.1) 8:10 - 8:30 AM - Effect of Growth Temperature on Lattice Relaxation during SiGe Growth on Si Substrates

Author(s):

Publication title:

SiGe: materials, processing, and devices : proceedings of the First international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-07

Pub. Year:

2004

Page(from):

849

Page(to):

856

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

Language:

English

Call no.:

E23400/200407

Type:

Conference Proceedings

Details

TDL ID:	ZA00015397
Series ID:	PA00000028
Conf. info. (Name):	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
Conf. info. (Number):	1st ; 206th ; 2004
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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