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(11.1) 3:10 - 3:40 PM - Strained Silicon on Relaxed SiGe Made by Ion Implantation and Strain Transfer (Invited)

Author(s):
Mantl, S.
Buca, D. M.
Hollander, B.
Morschbacher, M.
Trinkaus, H.
Luysberg, M.
Hueging, N.
Carius, L. Houben'R.
Loo, R.
Caymax, M.
Schafer, H. (ISG1-IT)
6 more
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
731
Page(to):
740
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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