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(6.3) 11:35 - 11:55 AM - Schottky Barrier Height Engineering with a Strained-Si channel for Sub-50nm Gate Schottky Source/Drain MOSFETs

Author(s):
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. date:
2004
Page(from):
471
Page(to):
482
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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