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(3.5) 5:00 - 5:20 PM - Mobility Enhancement in Compressively Strained SiGe Surface Channel pMOS(FET) with HfO2/TiN Gate Stack

Author(s):
Jin, B.
Datta, S.
Dewey, G.
Doczy, M.
Doyle, B.S.
Johnson, K.
Kavalieros, J.
Metz, M.
Zelick, N.
Chau, R.(Intel)
5 more
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
111
Page(to):
122
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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