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Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si

Author(s):
Song, H. K.
Jeong, J. K.
Kim, S. G.
Urn, M. Y.
Na, H. J.
Jung, S. Y.
Seo, H. S.
Yim, J. H.
Lee, J. B.
Kim, H. J.
5 more
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. Year:
2004
Page(from):
582
Page(to):
586
Pages:
5
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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