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Enhancement of lonization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors

Author(s):
Matsuura, H.  
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. date:
2004
Page(from):
570
Page(to):
581
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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