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Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics

Author(s):
Fitch, R.
Gillespie, J.
Via, D.
Agresta, D.
Jenkins, T.
Jessen, G.
Moser, N.
Crespo, A.
Dabiran, A.
Osinsk, A.
5 more
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. date:
2004
Page(from):
459
Page(to):
464
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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