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4H-SiC Planar MESFETs With fmax of 40 GHz Without Trapping Effect

Author(s):
Na, H.J.
Jung, S.Y.
Yim, J.H.
Urn, M.Y.
Song, H.K.
Kim, H.J.
1 more
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. Year:
2004
Page(from):
441
Page(to):
445
Pages:
5
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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