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Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors

Author(s):
Dabiran, A.M.
Osinsky, A.
Chow, P.P.
Zhang, Z.
Madjar, A.
Osinsky, S.
Hwang, J.C.M.
Fitch, R.C.
Gillespie, J.
Jessen, G.
Moser, N.
Crespo, A.
7 more
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. date:
2004
Page(from):
380
Page(to):
385
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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