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Si-Doped In0.23Ga0.77N/GaN Short-period Superlattice Tunneling Contact Layer Used on InGaN/GaN Laser Diode

Author(s):
Tun, C.J.
Tu, R.C.
Sheu, J.K.
Chou, C.C.
Wang, T.C.
Tsai, C.E.
Chi, G.C.
2 more
Publication title:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-06
Pub. date:
2004
Page(from):
254
Page(to):
259
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
Language:
English
Call no.:
E23400/200406
Type:
Conference Proceedings

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