Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

Author(s):

Publication title:

High purity silicon VIII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-05

Pub. Year:

2004

Page(from):

346

Page(to):

356

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774185 [1566774187]

Language:

English

Call no.:

E23400/200405

Type:

Conference Proceedings

Details

TDL ID:	ZA00015395
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	8th ; 206th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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