Dielectric Degradation of Gate SiO2 Films by Cu Contamination Posterior to Polvcrvstalline Si Gate MOS Canacitor Fabrication

Dielectric Degradation of Gate SiO2 Films by Cu Contamination Posterior to Polvcrvstalline Si Gate MOS Canacitor Fabrication

Author(s):

Onizawa, T.

Publication title:

High purity silicon VIII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-05

Pub. Year:

2004

Page(from):

317

Page(to):

326

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774185 [1566774187]

Language:

English

Call no.:

E23400/200405

Type:

Conference Proceedings

Details

TDL ID:	ZA00015395
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	8th ; 206th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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