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Impact of STI Width and Spacing on the Stress Generation in Deep Submicron CMOS

Author(s):
Publication title:
High purity silicon VIII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-05
Pub. Year:
2004
Page(from):
307
Page(to):
316
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774185 [1566774187]
Language:
English
Call no.:
E23400/200405
Type:
Conference Proceedings

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