Effects of Low temperature NH3 Treatment on HfO2/SiO2 Stack Gate Dielectrics Fabricated by MOCVD System

Effects of Low temperature NH3 Treatment on HfO2/SiO2 Stack Gate Dielectrics Fabricated by MOCVD System

Author(s):

Publication title:

Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-04

Pub. Year:

2004

Page(from):

434

Page(to):

442

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774178 [1566774179]

Language:

English

Call no.:

E23400/200404

Type:

Conference Proceedings

Details

TDL ID:	ZA00015394
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
Conf. info. (Number):	1st ; 206th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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