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Process Integration of Highly Stable 1.25um2 6T-SRAM Cell with 45 nm Gate Length Triple Gate Transistors

Author(s):
Lee, K.
Yang, J. -H.
Maeda, S.
Jin, Y.- S.
Choi, J. -A.
Bae, S. -G.
Kim, Y. -H.
Ahn, J. -H.
Sun, M. -C.
Ku, J. -H.
Rhee, H. -S.
You, Y. -S.
Kim, J. -Y.
Nam, B. -Y.
Kang, C. -J.
10 more
Publication title:
Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-04
Pub. Year:
2004
Page(from):
16
Page(to):
31
Pages:
16
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774178 [1566774179]
Language:
English
Call no.:
E23400/200404
Type:
Conference Proceedings

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