Process Integration of Highly Stable 1.25um2 6T-SRAM Cell with 45 nm Gate Length Triple Gate Transistors
- Author(s):
Lee, K. Yang, J. -H. Maeda, S. Jin, Y.- S. Choi, J. -A. Bae, S. -G. Kim, Y. -H. Ahn, J. -H. Sun, M. -C. Ku, J. -H. Rhee, H. -S. You, Y. -S. Kim, J. -Y. Nam, B. -Y. Kang, C. -J. - Publication title:
- Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2004-04
- Pub. Year:
- 2004
- Page(from):
- 16
- Page(to):
- 31
- Pages:
- 16
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774178 [1566774179]
- Language:
- English
- Call no.:
- E23400/200404
- Type:
- Conference Proceedings
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