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Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

Author(s):
Publication title:
Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-08
Pub. date:
2005
Page(from):
529
Page(to):
537
Pages:
9
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774260 [1566774268]
Language:
English
Call no.:
E23400/200508
Type:
Conference Proceedings

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