Blank Cover Image

Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

Author(s):
Publication title:
Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-08
Pub. Year:
2005
Page(from):
529
Page(to):
537
Pages:
9
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774260 [1566774268]
Language:
English
Call no.:
E23400/200508
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

Nicolett, A.S., Martino, J.A., Simoen, F., Claeys, C.

Electrochemical Society
7 Conference Proceedings Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
2 Conference Proceedings Detcrmination of the Silicon Film Thickness and Back Oxide Charge Density on Graded- Channel SOI oMOSFETs

Nicolett, A.S., Martino, J.A., Pavanello, M.A.

Electrochemical Society
8 Conference Proceedings Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETs

Paula Agopian, João Martino, Eddy Simoen, Cor Claeys

Electrochemical Society
3 Conference Proceedings The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

P. G. DerAgopian, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
9 Conference Proceedings Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs

Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
4 Conference Proceedings Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
10 Conference Proceedings Extraction of the Oxide Charges at the Buried Oxide/Silicon Substrate Interface in Accumulation-Mode SOI pMOSFETs at Low Temperatures

Pavanello, M A, Martino, J A

Electrochemical Society
5 Conference Proceedings Study of Series Resistance and Effective Channel Length Behavior Comparing Graded-Channel and Conventional SOI nMOSFETs

de Almeida, G.F., Nicolett, A.S., Martino, J.A.

Electrochemical Society
11 Conference Proceedings The Leakage Current Composition in Thin Film SOI NMOSFETS at High Temperatures

Bellodi, M., Martino, J.A.

Electrochemical Society
6 Conference Proceedings Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs

Galeti, M., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
12 Conference Proceedings A Study of Total and Series Resistance and Effective Channel Length Comparing SOI NMOSFET and GC SOI NMOSFET in Saturation Region

de Almeida, G. F., Martino, J. A.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12