A Charge-Based Continuous Model for Small-Geometry Graded-Channel SOI MOSFETs

A Charge-Based Continuous Model for Small-Geometry Graded-Channel SOI MOSFETs

Author(s):

Publication title:

Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-08

Pub. Year:

2005

Page(from):

482

Page(to):

491

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774260 [1566774268]

Language:

English

Call no.:

E23400/200508

Type:

Conference Proceedings

Details

TDL ID:	ZA00015391
Series ID:	PA00000028
Conf. info. (Name):	SBMICRO
Conf. info. (Number):	20th (2005)
Conf. info. (Venue):	Sao Paulo, Brazil
Conf. info. (Date):	2005.09.04-2005.09.07

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