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Comparison of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate

Author(s):
Song, S.C.
Lee, B.H.
Zhang, Z.
Choi, K.
Bae, S.H.
Alshareef, H.
Majhi, P.
Wen, H.C.
Bennett, J.
Sassman, B.
Zeitzoff, P.
6 more
Publication title:
ULSI Process Integration : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-06
Pub. Year:
2005
Page(from):
419
Page(to):
424
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774642 [1566774640]
Language:
English
Call no.:
E23400/200506
Type:
Conference Proceedings

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