46 Novel Dual Metal Gate Technology Using Mo-MoSix for Advanced MOS Device Applications

46 Novel Dual Metal Gate Technology Using Mo-MoSix for Advanced MOS Device Applications

Author(s):

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-05

Pub. Year:

2005

Page(from):

383

Page(to):

388

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774635 [1566774632]

Language:

English

Call no.:

E23400/200505

Type:

Conference Proceedings

Details

TDL ID:	ZA00015388
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2005 ; 207th
Conf. info. (Venue):	Quebec City, QC, Canada
Conf. info. (Date):	2005.05.16-2005.05.18

Similar Items:

1 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	7 Conference Proceedings Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices K. Chang-Liao, C. L. Cheng, C. Y. Lu, C. H. Huang, S. H. Wang, T. K. Wang Electrochemical Society
2 Conference Proceedings Integration of Hfx Tay N Metal Gate Electrode with High-k Gate Dielectric in MOS Devices K. Chang-Liao, C. Cheng, T. Wang, Y. Wang Electrochemical Society	8 Conference Proceedings Aluminum Alloy Formation and Impacts in Advanced Replacement Metal Gate Process K. Xu, Y. Wang, S.H. Shen, X. Xia, W.Ch. Tu, L. Karuppiah, H. Yang, Z. Ge, Y. Lei, M. Allen, N. Yoshida, L.W. Chang, B. … Materials Research Society
3 Conference Proceedings 41 Interstitial Oxygen Defect at Si Surface on Electrical Characteristics of High-K Gated MOS Devices Chang-Liao, K. S., Cheng, C. L., Wang, T. K. Electrochemical Society	9 Conference Proceedings Simulation of geometric effects on double-gate field emission devices Wang,C.-W., Chen,C.-L., Yang,Y.-H., Yang,T.-Y. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device (Invited Paper) Cheng, C.-L., Wang, T.-K., Chang-Liao, K.-S. SPIE-The International Society for Optical Engineering	10 Conference Proceedings CPL reticle technology for advanced device applications Conley, W.E., Van Den Broeke, D.J., Socha, R.J., Wu, W., Litt, L.C., Lucas, K.D., Roman, B.J., Peters, R.D., Parker, C., … SPIE - The International Society of Optical Engineering
5 Conference Proceedings SYNTHESIS AND PROPERTIES OF Mo/MoSiX MICROLAMINATES USING ION BEAM ASSISTED DEPOSITION Mashayekhi, A., Parfitt, L., Kalnas, C., Jones, J.W., Was, G.S., Hoffman, D.W. Materials Research Society	11 Conference Proceedings Dielectric Evolution Characteristics of HhCN Metal Electrode Gated MOS Stacks W. Wang, T. Nabatame, Y. Shimogaki Electrochemical Society
6 Conference Proceedings METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society	12 Conference Proceedings Calibration of the device simulation program suitable for low-temperature application Lu,W.-L., Ho,J.-H., Tseng,K.-F., Chang,T.-H., Lwo,J.-G., Lu,L.S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12