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27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications

Author(s):
Kittl, J. A.
Lauwers, A.
Pawlak, M. A.
Demeurisse, C.
Anil, K. G.
Veloso, A.
van Dal, M. J. H.
Schram, T.
Brijs, B.
Kaiser, M.
Kubicek, S.
Cunniffe, J.
Verbeeck, R.
Vrancken, C.
Biesemans, S.
Maex, K.
11 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-05
Pub. date:
2005
Page(from):
225
Page(to):
232
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
Language:
English
Call no.:
E23400/200505
Type:
Conference Proceedings

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