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16 Properties of HfTaxOy High-K Layers Deposited by ALCVD

Author(s):
Zhao, C.
Rittersma, Z. M.
Van Berkum, J. G. M.
Snijders, J. H. M.
Hendriks, A.
Breimer, P.
Groat, P.
Maes, J. W.
Wittesr, H.
Afanas'ev, V. V.
Tois, E.
Tuominen, M.
Caymax, M.
De Gendt, S.
Heyns, M.
10 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-05
Pub. date:
2005
Page(from):
133
Page(to):
140
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
Language:
English
Call no.:
E23400/200505
Type:
Conference Proceedings

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