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5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate

Author(s):
Pawlak, B.J.
Duffy, R.
Janssens, T.
Vandenorst, W.
Seven, S.
Richard, O.
Benedetti, A.
Eyben, P.
Colombeau, B.
Cowern, N.E.B.
Camilla-Castillo, R.A.
Jones, K.S.
Aboy, M.
8 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-05
Pub. Year:
2005
Page(from):
43
Page(to):
49
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
Language:
English
Call no.:
E23400/200505
Type:
Conference Proceedings

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