Modeling Approach Towards the Dislocation Density Reduction in InP LEC Grown Crystals

Modeling Approach Towards the Dislocation Density Reduction in InP LEC Grown Crystals

Author(s):

Fogliani, S. ( Politecnico di Milano, Milano, Italy )
Masi, M. ( Politecnico di Milano, Milano, Italy )
Carra, S. ( Politecnico di Milano, Milano, Italy )

Publication title:

AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California

Title of ser.:

AIChE meeting [papers]

Ser. no.:

1994

Pub. Year:

1994

Paper no.:

13e

Pages:

7

Pub. info.:

New York: American Institute of Chemical Engineers

Language:

English

Call no.:

A08000/950031

Type:

Conference Proceedings

Details

TDL ID:	ZA00015159
Series ID:	PA00000179
Conf. info. (Name):	AIChE Annual Meeting
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.11.13-1994.11.18
Note for article:	Fiche 21

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