Investigation of the trap states and their effect on the low-frequency noise in GaN/AlGaN HFETs

Investigation of the trap states and their effect on the low-frequency noise in GaN/AlGaN HFETs

Author(s):

Liu, W. L. ( Univ. of California/Riverside (USA) )
Chen, Y. L. ( Univ. of California/Los Angeles (USA) )
Balandin, A. A. ( Univ. of California/Riverside (USA) )
Wang, K. L. ( Univ. of California/Los Angeles (USA) )

Publication title:

Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5844

Pub. Year:

2005

Page(from):

268

Page(to):

275

Pages:

8

Pub. info.:

Bellingham, Washington: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458391 [0819458392]

Language:

English

Call no.:

P63600/5844

Type:

Conference Proceedings

Details

TDL ID:	ZA00015078
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise in Devices and Circuits
Conf. info. (Number):	2005 : 3rd
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	2005.05.24-2005.05.26

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