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Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress (Invited Paper)

Author(s):
Jha, S. K. ( The Hong Kong Polytechnic Univ. (Hong Kong China) )
Zhu, C. F. ( The Hong Kong Polytechnic Univ. (Hong Kong China) )
Jelenkovic, E. ( The Hong Kong Polytechnic Univ. (Hong Kong China) )
Tong, K. Y. ( The Hong Kong Polytechnic Univ. (Hong Kong China) )
Surya, C. ( The Hong Kong Polytechnic Univ. (Hong Kong China) )
Schweizer, H. ( Univ. of Stuttgart (Germany) )
Pilkuhn, M. ( Univ. of Stuttgart (Germany) )
2 more
Publication title:
Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5844
Pub. Year:
2005
Page(from):
256
Page(to):
267
Pages:
12
Pub. info.:
Bellingham, Washington: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819458391 [0819458392]
Language:
English
Call no.:
P63600/5844
Type:
Conference Proceedings

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