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Flicker noise characteristics of MOSFETs with HfO2, HfAlOx, and Al2O3/HfO2 gate dielectrics

Author(s):
Devireddy, S. P. ( Univ. of Texas at Arlington (USA) )
Min, B. ( Univ. of Texas at Arlington (USA) )
Celik-Butler, Z. ( Univ. of Texas at Arlington (USA) )
Wang, F. ( Freescale Semiconductor Inc. (USA) )
Zlotnicka, A. ( Freescale Semiconductor Inc. (USA) )
Tseng, H. -H. ( Freescale Semiconductor Inc. (USA) )
Tobin, P. J. ( Freescale Semiconductor Inc. (USA) )
2 more
Publication title:
Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5844
Pub. Year:
2005
Page(from):
208
Page(to):
217
Pages:
10
Pub. info.:
Bellingham, Washington: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819458391 [0819458392]
Language:
English
Call no.:
P63600/5844
Type:
Conference Proceedings

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