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Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology

Author(s):
Zhao, E. ( Georgia Institute of Technology (USA) )
Krithivasan, R. ( Georgia Institute of Technology (USA) )
Sutton, A. K. ( Georgia Institute of Technology (USA) )
Jin, Z. ( Georgia Institute of Technology (USA) )
Cressler, J. D. ( Georgia Institute of Technology (USA) )
El-Kareh, B. ( Texas Instruments (Germany) )
Balster, S. ( Texas Instruments (Germany) )
Yasuda, H. ( Texas Instruments (Germany) )
3 more
Publication title:
Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5844
Pub. Year:
2005
Page(from):
132
Page(to):
142
Pages:
11
Pub. info.:
Bellingham, Washington: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819458391 [0819458392]
Language:
English
Call no.:
P63600/5844
Type:
Conference Proceedings

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