Trap competition inducing R.T.S noise in saturation range in N-MOSFETs

Trap competition inducing R.T.S noise in saturation range in N-MOSFETs

Author(s):

Leyris, C. ( ST Microelectronics (France) and Univ. Montpellier II/CNRS (France) )
Hoffmann, A. ( Univ. Montpellier II/CNRS (France) )
Valenza, M. ( Univ. Montpellier II/CNRS (France) )
Vildeuil, J. -C. ( ST Microelectronics (France) )
Roy, F. ( ST Microelectronics (France) )

Publication title:

Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5844

Pub. Year:

2005

Page(from):

41

Page(to):

51

Pages:

11

Pub. info.:

Bellingham, Washington: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458391 [0819458392]

Language:

English

Call no.:

P63600/5844

Type:

Conference Proceedings

Details

TDL ID:	ZA00015078
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise in Devices and Circuits
Conf. info. (Number):	2005 : 3rd
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	2005.05.24-2005.05.26

Similar Items:

1 Conference Proceedings Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025 Valenza, M., Hoffmann, A., Martinez, F., Laigle, A., Rhayem, J., Gillon, R., Tack, M. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Investigation of Drain Current Saturation in 4H-SiC MOSFETs G. Pennington, S. Potbhare, N. Goldsman, D. Habersat, A. Lelis, J.M. McGarrity, C. Ashman Trans Tech Publications
2 Conference Proceedings Low frequency gate noise modeling of ultrathin oxide MOSFETs F. Martinez, M. Valenza SPIE - The International Society of Optical Engineering	8 Conference Proceedings The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance, Vertical MOSFET with Lithography-Independent Critical Dimensions Hergenrother, J.M., Oh, S.H., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Baumann, F.H., Grazul, J.L., Johnson, … Electrochemical Society
3 Conference Proceedings Impact of scaling down on 1/f noise in MOSFETs Valenza, M., Hoffmann, A., Laigle, A., Rigaud, D., Marin, M. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Neutral Electron Traps in X-Ray Irradiated and Annealed MOSFETs R.B. Klein, N.S. Saks, G.J. Campisi, J.M. Logue Electrochemical Society
4 Conference Proceedings Is SOI CMOS a promising technology for SOCs in high frequency range? Invited Raynaud, C., Gianesello, F., Tinella, C., Flatresse, P., Gwoziecki, R., Touret, P., Avenier, G., Haendler, S., Gonnard, … Electrochemical Society	10 Conference Proceedings MBE growth of oxides for III-N MOSFETs Gila, B., Lee, K.N., Laroche, J., Ren, F., Donovan, S.M., Abernathy, C.R., Han, J. Materials Research Society
5 Conference Proceedings RTS in submicron MOSFETS and quantum dots (Invited Paper) Sikula, J., Pavelka, J., Sedlakova, V., Tacano, M., Hashiguchi, S., Toita, M. SPIE - The International Society of Optical Engineering	11 Conference Proceedings SATURATION BEHAVIOR OF THE LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORHOUS SILICON Park, H. R.., Liu, J. Z., Cabarrocas, i Roca, P., Maruyama, A., Isomura, M., Wagner, S., Abelson, J. R., Finger, F. Materials Research Society
6 Conference Proceedings Design Competition for Development of a General Purpose Fissile Package T. K. Houghtaling, G. A. Abramczyk, D. S. Hoang, D. R. Leduc, R. N. Lutz, R. W. Watkins, T. Wu, A. C. Smith, P. S. … American Society of Mechanical Engineers	12 Conference Proceedings Single-electron transistor coupled to a silicon nano-MOSFET Chan, V. C., Buehler, T. M., McCamey, D. R., Ferguson, A., Reilly, D. J., Yang, C., Hopt, T., Dzurak, A. S., Hamilton, … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12