(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers

(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers

Author(s):

Damilano, B. ( Ctr. National de la Recherche Scientifique (France) )

Barjon, J. ( Ctr. National de la Recherche Scientifique (France) )

Hugues, M. ( Ctr. National de la Recherche Scientifique (France) )

Duboz, J. -Y. ( Ctr. National de la Recherche Scientifique (France) )

Massies, J. ( Ctr. National de la Recherche Scientifique (France) )

Ulloa, J. -M. ( Univ. Politecnica de Madrid (Spain) )

Montes, M. ( Univ. Politecnica de Madrid (Spain) )

Hierro, A. ( Univ. Politecnica de Madrid (Spain) )

3 more

Publication title:

Photonic Materials, Devices, and Applications

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5840

Pub. Year:

2005

Page(from):

781

Page(to):

789

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458353 [081945835X]

Language:

English

Call no.:

P63600/5840-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00015074
Series ID:	PA00000029
Conf. info. (Name):	SPIE Microtechnologies : Photonic Materials, Devices, and Applications
Conf. info. (Number):	2005
Conf. info. (Venue):	Seville, Spain
Conf. info. (Date):	2005.05.09-2005.05.11

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