Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AIN: etching and planarization processes (Invited Paper)

Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AIN: etching and planarization processes (Invited Paper)

Author(s):

Sangrador, J. ( Univ. Politecnica de Madrid (Spain) )

Olivares, J. ( Univ. Politecnica de Madrid (Spain) )

Iborra, E. ( Univ. Politecnica de Madrid (Spain) )

Vergara, L. ( Univ. Politecnica de Madrid (Spain) )

Ciement, M. ( Univ. Politecnica de Madrid (Spain) )

Sanz-Hervas, A. ( Univ. Politecnica de Madrid (Spain) )

1 more

Publication title:

Smart sensors, actuators, and MEMS II : 9-11 May 2005, Seville, Spain

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5836

Pub. Year:

2005

Page(from):

1

Page(to):

15

Pages:

15

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458315 [0819458317]

Language:

English

Call no.:

P63600/5836

Type:

Conference Proceedings

Details

TDL ID:	ZA00015068
Series ID:	PA00000029
Conf. info. (Name):	Microtechnologies for the New Millennium : Smart Sensors, Actuators, and Mems
Conf. info. (Number):	2005 : 2nd
Conf. info. (Venue):	Seville, Spain
Conf. info. (Date):	2005.05.09-2005.05.11

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