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Structural and electricat properties of high-K Al2O3-ZrO2 gate dielectrics on SOI substrate

Author(s):
Ding, Y. F. ( East China Normal Univ. (China) )
Ye, G. S. ( Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Zhang, N. L. ( Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Zhu, M. ( Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Lin, C. L. ( Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Zhu, Z. Q. ( East China Normal Univ. (China) )
1 more
Publication title:
Fifth International Conference on Thin Film Physics and Applications : 31 May-2 June, 2004, Shanghai, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5774
Pub. Year:
2004
Page(from):
646
Page(to):
650
Pages:
5
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457554 [0819457558]
Language:
English
Call no.:
P63600/5774
Type:
Conference Proceedings

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