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MBE growth and properties of InN and InN-based diluted magnetic semiconductors (Invited Paper)

Author(s):
  • Chen, P. P. ( Shanghai Institute of Technical Physics. CAS (China) and Tohoku Univ. (Japan) )
  • Makino, H. ( Tohoku Univ. (Japan) )
  • Lu, W. ( Shanghai Institute of Technical Physics. CAS (China) )
  • Yao, T. ( Tohoku Univ. (Japan) )
Publication title:
Fifth International Conference on Thin Film Physics and Applications : 31 May-2 June, 2004, Shanghai, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5774
Pub. date:
2004
Page(from):
29
Page(to):
33
Pages:
5
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457554 [0819457558]
Language:
English
Call no.:
P63600/5774
Type:
Conference Proceedings

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