25 nm immersion lithography at 193 nm wavelength

25 nm immersion lithography at 193 nm wavelength

Author(s):

Choi, S.-H. ( Samsung Electronics Co., Ltd. (South Korea) )

Park, T.-H. ( Samsung Electronics Co., Ltd. (South Korea) )

Kim, E. ( Samsung Electronics Co., Ltd. (South Korea) )

Youn, H.-J. ( Samsung Electronics Co., Ltd. (South Korea) )

Lee, D.-Y. ( Samsung Electronics Co., Ltd. (South Korea) )

Ban, Y.-C. ( Samsung Electronics Co., Ltd. (South Korea) )

Je, A.-Y. ( Samsung Electronics Co., Ltd. (South Korea) )

Kim, D.-H. ( Samsung Electronics Co., Ltd. (South Korea) )

Hong, J.-S. ( Samsung Electronics Co., Ltd. (South Korea) )

Kim, Y.-H. ( Samsung Electronics Co., Ltd. (South Korea) )

Yoo, M.-H. ( Samsung Electronics Co., Ltd. (South Korea) )

Kong, J.-T. ( Samsung Electronics Co., Ltd. (South Korea) )

7 more

Publication title:

Optical microlithography XVIII : 1-4 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5754

Pub. Year:

2005

Pt.:

1

Page(from):

141

Page(to):

147

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457349 [0819457345]

Language:

English

Call no.:

P63600/5754

Type:

Conference Proceedings

Details

TDL ID:	ZA00014979
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2005 : 18th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.03.01-2005.03.04
Note for article:	18th Optical microlithography,1-4 March, 2005, San Jose, California, USA

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