Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Author(s):

Bravo-Vasquez, J. P. ( Cornell Univ. (USA) )
Kwark, Y.-J. ( Cornell Univ. (USA) )
Ober, C. K. ( Cornell Univ. (USA) )
Cao, H. B. ( Intel Corp. (USA) )
Deng, H. ( Intel Corp. (USA) )

Publication title:

Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5753(1)

Pub. Year:

2005

Pt.:

1

Page(from):

109

Page(to):

121

Pages:

13

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457332 [0819457337]

Language:

English

Call no.:

P63600/5753-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014977
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2005 : 22th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.02.28-2005.03.02

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