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Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Author(s):
Publication title:
Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5753(1)
Pub. date:
2005
Pt.:
1
Page(from):
109
Page(to):
121
Pages:
13
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457332 [0819457337]
Language:
English
Call no.:
P63600/5753-1
Type:
Conference Proceedings

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