BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

Author(s):

Cain, J. P. ( Univ. of California/Berkeley (USA) )
Naulleau, P. ( Lawrence Berkeley National Lab. (USA) )
Spanos, C. J. ( Univ. of California/Berkeley (USA) )

Publication title:

Emerging lithographic technologies IX : 1-3 March 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5751

Pub. Year:

2005

Page(from):

527

Page(to):

537

Pages:

11

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457318 [0819457310]

Language:

English

Call no.:

P63600/5751-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014972
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging lithographic technologies
Conf. info. (Number):	2005 : 9th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.03.01-2005.03.03

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