Degradation of GaN-based high-power lasers and recent advancements (Invited Paper)

Degradation of GaN-based high-power lasers and recent advancements (Invited Paper)

Author(s):

Takeya, M. ( Sony Corp. (Japan) )
Hashizu, T. ( Sony Corp. (Japan) )
Ikeda, M. ( Sony Corp. (Japan) )

Publication title:

Novel In-Plane Semiconductor Lasers IV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5738

Pub. Year:

2005

Page(from):

63

Page(to):

71

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457127 [0819457124]

Language:

English

Call no.:

P63600/5738

Type:

Conference Proceedings

Details

TDL ID:	ZA00014954
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Novel In-Plane Semiconductor Lasers
Conf. info. (Number):	2005 : 4th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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