Heteroepitaxy of high-quality Ge on Si by nanoscale seed pads grown through a SiO2 interlayer (Invited Paper)

Heteroepitaxy of high-quality Ge on Si by nanoscale seed pads grown through a SiO2 interlayer (Invited Paper)

Author(s):

Li, Q. ( Univ. of New Mexico (USA) )

Jiang, Y.-B. ( Univ. of New Mexico (USA) )

Krauss, J.L. ( Univ. of Wisconsin/Madison (USA) )

Xu, H. ( Univ. of New Mexico (USA) )

Brueck, S.R.J. ( Univ. of New Mexico (USA) )

Hersee, S. ( Univ. of New Mexico (USA) )

Han, S.M. ( Univ. of New Mexico (USA) )

2 more

Publication title:

Quantum Dots, Nanoparticles, and Nanoclusters II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5734

Pub. Year:

2005

Page(from):

75

Page(to):

82

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457080 [0819457086]

Language:

English

Call no.:

P63600/5734

Type:

Conference Proceedings

Details

TDL ID:	ZA00014950
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Quantum Dots, Nanoparticles, and Nanoclusters
Conf. info. (Number):	2005 : 2nd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.25

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