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Disordering of InGaAs/GaAs multiquantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration

Author(s):
  • Yu, J.S. ( Gwangju Institute of Science and Technology (South Korea) )
  • Kim, J.M. ( Gwangju Institute of Science and Technology (South Korea) )
  • Lee, Y.T. ( Gwangju Institute of Science and Technology (South Korea) )
  • Song, J.D. ( Korea Institute of Science and Technology (South Korea) )
  • Lim, H. ( Ajou Univ. (South Korea) )
Publication title:
Optoelectronic Integrated Circuits VII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5729
Pub. Year:
2005
Page(from):
61
Page(to):
71
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457035 [0819457035]
Language:
English
Call no.:
P63600/5729
Type:
Conference Proceedings

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