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Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

Author(s):
Publication title:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5725
Pub. Year:
2005
Page(from):
360
Page(to):
370
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819456991 [0819456993]
Language:
English
Call no.:
P63600/5725
Type:
Conference Proceedings

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