Ge nanocrystals embedded in Hf-aluminate high-k gate dielectric for floating gate memory application

Ge nanocrystals embedded in Hf-aluminate high-k gate dielectric for floating gate memory application

Author(s):

Lee, P. F. ( Hong Kong Polytechnic Univ. (Hong Kong China) )
Liu, W. L. ( Hong Kong Polytechnic Univ. (Hong Kong China) and Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Song, Z. T. ( Shanghai Institute of Microsystem and Information Technology, CAS (China) )
Dai, J. Y. ( Hong Kong Polytechnic Univ. (Hong Kong China) )

Publication title:

Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5650

Pub. Year:

2004

Page(from):

150

Page(to):

155

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456106 [0819456101]

Language:

English

Call no.:

P63600/5650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014867
Series ID:	PA00000029
Conf. info. (Name):	Smart Materials, Nano-, and Micro- Smart Systems : Micro- and Nanotechnology
Conf. info. (Number):	2004 : 2nd
Conf. info. (Venue):	Sydney, Australia
Conf. info. (Date):	2004.12.13-2004.12.15

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