Origin mechanism of residual stresses in porous silicon film (Invited Paper)
- Author(s):
- Publication title:
- MEMS/MOEMS Technologies and Applications II
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5641
- Pub. Year:
- 2004
- Page(from):
- 116
- Page(to):
- 123
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819455963 [0819455962]
- Language:
- English
- Call no.:
- P63600/5641
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society of Optical Engineering |
8
Conference Proceedings
The Origin and the Creation Mechanism of Positive Charges in Silicon Oxide Films
Electrochemical Society |
Materials Research Society |
9
Conference Proceedings
Silicon to Silicon Wafer Bonding at Low Temperature Using Residual Stress Controlled Evaporated Glass Thin Film
Trans Tech Publications |
MRS - Materials Research Society |
10
Conference Proceedings
Carbonaceous meteorites: source or substrate for life's origin on Earth? (Invited Paper)
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
Photoelastic tomography for residual stress measurement in glass (Invited Paper)
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
6
Conference Proceedings
Biosensing using porous silicon photonic bandgap structures (Invited Paper) [6005-09]
SPIE - The International Society of Optical Engineering |
Electrochemical Society |