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EL2 deep level defects and above-band gap two-photon absorption in high-gain lateral semi-insulating GaAs photoconductive switch

Author(s):
  • Shi, W. ( Xi'an Univ. of Technology (China) )
  • Wang, W. ( Xi'an Univ. of Technology (China) )
  • Niu, H. ( Xi'an Univ. of Technology (China) )
  • Zhang, X. ( Xi'an Univ. of Technology (China) )
  • Ji, W. ( Xi'an Univ. of Technology (China) )
Publication title:
Advanced materials and devices for sensing and imaging II : 8-10 November 2004, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5633
Pub. Year:
2004
Page(from):
585
Page(to):
589
Pages:
5
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455888 [0819455881]
Language:
English
Call no.:
P63600/5633
Type:
Conference Proceedings

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