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Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN

Author(s):
  • Tang, Y. ( Shanghai Institute of Technical Physics (China) )
  • Li, X. ( Shanghai Institute of Technical Physics (China) )
  • Kang, Y. ( Shanghai Institute of Technical Physics (China) )
  • Gong, H. ( Shanghai Institute of Technical Physics (China) )
Publication title:
Advanced materials and devices for sensing and imaging II : 8-10 November 2004, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5633
Pub. Year:
2004
Page(from):
401
Page(to):
408
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455888 [0819455881]
Language:
English
Call no.:
P63600/5633
Type:
Conference Proceedings

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