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Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

Author(s):
  • Lin, C.-K. ( National Chiao Tung Univ. (Taiwan, China) )
  • Kuo, H.-C. ( National Chiao Tung Univ. (Taiwan, China) )
  • Liao, Y.-S. ( National Chiao Tung Univ. (Taiwan, China) )
  • Lin, G.-R. ( National Chiao Tung Univ. (Taiwan, China) )
Publication title:
Semiconductor and Organic Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5624
Pub. date:
2000
Page(from):
399
Page(to):
406
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455789 [0819455784]
Language:
English
Call no.:
P63600/5624
Type:
Conference Proceedings

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