Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

Author(s):

Lin, C.-K. ( National Chiao Tung Univ. (Taiwan, China) )
Kuo, H.-C. ( National Chiao Tung Univ. (Taiwan, China) )
Liao, Y.-S. ( National Chiao Tung Univ. (Taiwan, China) )
Lin, G.-R. ( National Chiao Tung Univ. (Taiwan, China) )

Publication title:

Semiconductor and Organic Optoelectronic Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5624

Pub. Year:

2000

Page(from):

399

Page(to):

406

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819455789 [0819455784]

Language:

English

Call no.:

P63600/5624

Type:

Conference Proceedings

Details

TDL ID:	ZA00014833
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics
Conf. info. (Number):	2004
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	2004.11.09-2004.11.11

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