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Calculation of valence subband structures for strained GalnP/AIGalnP quantum wells without axial approximation

Author(s):
Xu, Y. ( Institute of Semiconductors, CAS (China) )
Zhu, X. ( Institute of Semiconductors, CAS (China) )
Gan, Q. ( Institute of Semiconductors, CAS (China) )
Song, G. ( Institute of Semiconductors, CAS (China) )
Cao, Q. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) )
Guo, L. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) )
Li, Y. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) )
Chen, L. ( Institute of Semiconductors, CAS (China) )
3 more
Publication title:
Semiconductor and Organic Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5624
Pub. date:
2000
Page(from):
221
Page(to):
225
Pages:
5
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455789 [0819455784]
Language:
English
Call no.:
P63600/5624
Type:
Conference Proceedings

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