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GaAs/GaAs0.89Sb0.11 double heterojunction bipolar transistors (DHBTS) grown by SSMBE with a GaAs decomposition source

Author(s):
  • Niu, P.-J. ( Tianjin Polytechnic Univ. (China) )
  • Hu, H.-Y. ( Tianjin Polytechnic Univ. (China) and Institute of Physics, CAS (China) )
  • Dong, H.-W. ( Institute of Physics, CAS (China) )
  • Wang, W.-X. ( Institute of Physics, CAS (China) )
  • Zhou, J.-M. ( Institute of Physics, CAS (China) )
Publication title:
Semiconductor and Organic Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5624
Pub. Year:
2000
Page(from):
630
Page(to):
635
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455789 [0819455784]
Language:
English
Call no.:
P63600/5624
Type:
Conference Proceedings

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