Device performance of AlGaN-based 240-300-nm deep UV LEDs (Invited Paper)
- Author(s):
Fischer, A. J. ( Sandia National Labs. (USA) ) Allerman, A. A. ( Sandia National Labs. (USA) ) Crawford, M. H. ( Sandia National Labs. (USA) ) Bogart, K. H. A. ( Sandia National Labs. (USA) ) Lee , S. R. ( Sandia National Labs. (USA) ) Kaplar , R. J. ( Sandia National Labs. (USA) ) Chow , W. W. ( Sandia National Labs. (USA) ) - Publication title:
- Fourth international conference on solid state lighting : 3-6 August 2004, Denver, Colorado, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5530
- Pub. Year:
- 2004
- Page(from):
- 38
- Page(to):
- 47
- Pages:
- 10
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0227786x
- ISBN:
- 9780819454683 [0819454680]
- Language:
- English
- Call no.:
- P63600/5530
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
Materials Research Society |