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1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Author(s):
Rumyantsev, S. L. ( Rensselaer Polytechnic Institute (USA) )
Shur, M. S. ( Rensselaer Polytechnic Institute (USA) )
Knap, W. ( CNRS-Univ. Montpellier II (France) )
Dyakonova, N. ( CNRS-Univ. Montpellier II (France) )
Pascal, F. ( Ctr. d'Electronique et de Micro-optoelectronique de Montpellier (France) )
Hoffman, A. ( Ctr. d'Electronique et de Micro-optoelectronique de Montpellier (France) )
Ghuel, Y. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Gaquiere, C. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Theron, D. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
4 more
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. Year:
2004
Page(from):
277
Page(to):
285
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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