Low-frequency noise in 4H-SiC BJTs

Low-frequency noise in 4H-SiC BJTs

Author(s):

Rumyantsev, S. L. ( Rensselaer Polyiechnic Institute (USA) )
Levinshtein, M. E. ( A.F. loffe Physico-Technical Institute (Russia) )
Agarwal, A. K. ( Cree. Inc. (USA) )
Palmour, J. W. ( Cree. Inc. (USA) )

Publication title:

Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5470

Pub. Year:

2004

Page(from):

251

Page(to):

254

Pages:

4

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453969 [081945396X]

Language:

English

Call no.:

P63600/5470

Type:

Conference Proceedings

Details

TDL ID:	ZA00014661
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise In Devices and Circuits
Conf. info. (Number):	2004 : 2nd
Conf. info. (Venue):	Maspalomas, Gran Canaria, Spain
Conf. info. (Date):	2004.05.26-2004.05.28

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