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Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Author(s):
Lukyanchikova, N. R. ( Institute of Semiconductor Physics (Ukraine) )
Garbar, N. ( Institute of Semiconductor Physics (Ukraine) )
Smolanka, A. ( Institute of Semiconductor Physics (Ukraine) )
Simoen, E. ( IMEC (Belgium) )
Mercha, A. ( IMEC (Belgium) )
Claeys, C. ( IMEC (Belgium) and Katholieke Univ. Leuven (Belgium) )
1 more
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. Year:
2004
Page(from):
208
Page(to):
214
Pages:
7
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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